Power Amplifier Minos 2SC4793 NPN Triple Diffusion Type Suitable for High Voltage Electronic Circuits

Categories	Single Bipolar Transistors
Emitter-Base Voltage(Vebo):	5V
Current - Collector Cutoff:	1uA
Pd - Power Dissipation:	50W
Transition frequency(fT):	40MHz
type:	NPN
Current - Collector(Ic):	1A
Collector - Emitter Voltage VCEO:	230V
Operating Temperature:	-
Description:	Bipolar (BJT) Transistor NPN 230V 1A 40MHz 50W Through Hole TO-220F-3
Mfr. Part #:	2SC4793
Model Number:	2SC4793
Package:	TO-220F-3

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Power Amplifier Minos 2SC4793 NPN Triple Diffusion Type Suitable for High Voltage Electronic Circuits

Product Overview

The Minos Silicon NPN Triple Diffusion Type Power Amplifier is designed for high-voltage applications. It is complementary to the 2SA1837 and features a high collector voltage of 230V (min). This power amplifier is suitable for various electronic circuits requiring robust performance and reliability.

Product Attributes

Brand: Minos Silicon
Type: NPN Triple Diffusion Type Power Amplifier
Package: TO-220F

Technical Specifications

Symbol	Parameter	Rating	Unit	Test Condition	Min	Typ	Max
Absolute Maximum Ratings
VCBO	Collector-base voltage	230	V
VCEO	Collector-emitter voltage	230	V
VEBO	Emitter-base voltage	5	V
IC	Collector current	1	A
IB	Base current	0.2	A
PC	Collector power dissipation (Tc=25)	50	W
Tj	Junction temperature	150
TSTG	Storage temperature range				-55		150
Thermal Characteristics
RJC	Junction-to-Case		/W			3.0
Electrical Characteristics
ICBO	Collector-Base Cut-off Current		uA	VCB=230V, IE=0		1.0
IEBO	Emitter-Base Cut-off Current		uA	VEB=5V, IC=0		1.0
VCEO	Collector-Emitter Breakdown Voltage	230	V	IC=1mA
hFE	DC current gain			IC=0.1A; VCE=5V	100	300
VCEsat	Collector-emitter saturation voltage		V	IC=0.5A; IB=0.05A		0.5
VBEsat	Base-Emitter Saturation Voltage		V	IC=0.5A,IB=0.05A		1.4
VBE	Base-emitter voltage		V	VCE=5V;IC=0.5A		1.5
fT	Transition frequency	40	MHz	VCE=10V;IC=100mA

Package Information

TO-220F PACKAGE

Symbol	Min	Max
A	4.35	4.75
A1	2.30	2.70
A2	0.40	0.80
A3	2.1	2.50
b	0.60	1.00
b1	1.00	1.40
c	0.30	0.70
e	2.30	2.70
E	9.80	10.2
E1	6.30	6.70
H	15.6	16.0
H1	8.80	9.20
H2	12.9	13.5
H3	3.10	3.50
G	3.10	3.50
P	3.10	3.50

Important Notes:

Exceeding the maximum ratings of the device may cause damage, including permanent failure, which can affect the dependability of the machine. Please adhere to the absolute maximum ratings during circuit design.
When installing a heat sink, pay attention to the torsional moment and the smoothness of the heat sink.
MOSFETs are sensitive to static electricity and require protection during use.
Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.

2410122013_Minos-2SC4793_C2920868.pdf

Power Amplifier Minos 2SC4793 NPN Triple Diffusion Type Suitable for High Voltage Electronic Circuits

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