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| Categories | Single Bipolar Transistors |
|---|---|
| Current - Collector Cutoff: | 100nA |
| Emitter-Base Voltage(Vebo): | 5V |
| Pd - Power Dissipation: | 300mW |
| Transition frequency(fT): | 100MHz |
| type: | PNP |
| Current - Collector(Ic): | 1.5A |
| Collector - Emitter Voltage VCEO: | 25V |
| Description: | 300mW PNP 1.5A 25V SOT-23 Single Bipolar Transistors RoHS |
| Mfr. Part #: | SS8550 |
| Model Number: | SS8550 |
| Package: | SOT-23 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The SS8550 is a PNP transistor in a SOT-23 plastic-encapsulated package, designed for general-purpose applications. It offers a power dissipation of 300mW and is characterized by high stability and reliability. This transistor is complementary to the S8050. Its small outline plastic package makes it suitable for surface mounting.
| Parameter | Symbol | Test Condition | Value | Unit |
|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics (TA = 25C unless otherwise noted) | ||||
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -25 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current-Continuous | IC | -1500 | mA | |
| Collector Power Dissipation | PC | 300 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55-+150 | ||
| Thermal resistance From junction to ambient | RJA | 417 | /W | |
| Electrical Characteristics (TA = 25C unless otherwise noted) | ||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100uA, IE=0 | -40 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-0.1mA, IB=0 | -25 | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100uA, IC=0 | -5 | V |
| Collector cut-off current | ICEO | VCE=-20V, IB=0 | -100 | nA |
| Collector cut-off current | ICBO | VCB=-40V, IE=0 | -100 | nA |
| Emitter cut-off current | IEBO | VEB=-3V, IC=0 | -100 | nA |
| DC current gain | hFE(1) | VCE=-1V, IC=-100mA | 120 - 400 | |
| DC current gain | hFE(2) | VCE=-1V, IC=-800mA | 50 | |
| Collector-emitter saturation voltage | VCE(sat) | IC=-800mA, IB=-80mA | -0.60 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=-800mA, IB=-80mA | -1.20 | V |
| Transition frequency | fT | VCE=-1V, IC=-10mA | 100 | MHz |
| Collector output capacitance | Cob | VCB=-10V,IE=0,f=1MHz | 20 | pF |
| RANK | RANGE |
|---|---|
| L | 120-200 |
| H | 200-350 |
| J | 300-400 |
Plastic surface mounted package. Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs.
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