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| Categories | Single Bipolar Transistors |
|---|---|
| Emitter-Base Voltage(Vebo): | 5V |
| Current - Collector Cutoff: | 100nA |
| Pd - Power Dissipation: | 300mW |
| Transition frequency(fT): | 200MHz |
| type: | PNP |
| Current - Collector(Ic): | 600mA |
| Collector - Emitter Voltage VCEO: | 40V |
| Operating Temperature: | - |
| Description: | Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 300mW Surface Mount SOT-23 |
| Mfr. Part #: | MMBT4403 |
| Model Number: | MMBT4403 |
| Package: | SOT-23 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The MMBT4403 is a 2T SOT-23 Plastic-Encapsulate Transistor, a high diode semiconductor designed as a switching transistor. It offers reliable performance for various electronic applications.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A,IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA,IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A ,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-35V,IE=0 | -0.1 | A | ||
| Collector cut-off current | ICEX | VCE=-35V, VBE=0.4V | -0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=-4V,IC=0 | -0.1 | A | ||
| DC current gain | hFE1 | VCE=-1V, IC=-0.1mA | 30 | |||
| DC current gain | hFE2 | VCE=-1V, IC=-1mA | 60 | |||
| DC current gain | hFE3 | VCE=-1V, IC=-10mA | 100 | |||
| DC current gain | hFE4 | VCE=-2V, IC=-150mA | 100 | 300 | ||
| DC current gain | hFE5 | VCE=-2V, IC=-500mA | 20 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-150mA,IB=-15mA | -0.4 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA,IB=-50mA | -0.75 | V | ||
| Base-emitter saturation voltage | VBE(sat | IC=-150mA,IB=-15mA | -0.95 | V | ||
| Base-emitter saturation voltage | VBE(sat | IC=-500mA,IB=-50mA | -1.3 | V | ||
| Transition frequency | fT | VCE=-10V, IC=-20mA,f =100MHz | 200 | MHz | ||
| Delay time | td | VCC=-30V, VBE(off)=-0.5V IC=-150mA , IB1=-15mA | 15 | ns | ||
| Rise time | tr | 20 | ns | |||
| Storage time | ts | VCC=-30V, IC=-150mA IB1=IB2=-15mA | 225 | ns | ||
| Fall time | tf | 60 | ns |
|
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