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High Current NPN Transistor BLUE ROCKET 9013M-H Suitable for Class B Amplifier and Complementary Pair

Categories	Single Bipolar Transistors
Emitter-Base Voltage(Vebo):	5V
Current - Collector Cutoff:	100nA
Pd - Power Dissipation:	450mW
Transition frequency(fT):	-
type:	NPN
Number:	1 NPN
Current - Collector(Ic):	500mA
Collector - Emitter Voltage VCEO:	20V
Operating Temperature:	-
Description:	Bipolar (BJT) Transistor NPN 20V 500mA 450mW Surface Mount SOT-23
Mfr. Part #:	9013M-H
Model Number:	9013M-H
Package:	SOT-23

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High Current NPN Transistor BLUE ROCKET 9013M-H Suitable for Class B Amplifier and Complementary Pair

Product Overview

The 9013M is a Silicon NPN transistor housed in a SOT-23 plastic package. It features high collector current (PC) and high DC current gain (hFE) with excellent linearity. This transistor is designed as a complementary pair to the 9012M and is primarily used as an amplifier in portable radios for class B push-pull operation. Its high performance and complementary nature make it suitable for various amplification applications.

Product Attributes

Brand: fsbrec (implied from datasheet URL)
Package Type: SOT-23 Plastic Package
Transistor Type: NPN Silicon Transistor
Complementary Pair: 9012M

Technical Specifications

Absolute Maximum Ratings (Ta=25)

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	40	V
Collector to Emitter Voltage	VCEO	20	V
Emitter to Base Voltage	VEBO	5.0	V
Collector Current	IC	500	mA
Base Current	IB	100	mA
Collector Power Dissipation	PC	450	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=0.1mA, IE=0		40	V
Collector to Emitter Breakdown Voltage	VCEO	IC=1.0mA, IB=0		20	V
Emitter to Base Breakdown Voltage	VEBO	IE=0.1mA, IC=0		5.0	V
Collector Cut-Off Current	ICBO	VCB=25V, IE=0		0.1	A
Emitter Cut-Off Current	IEBO	VEB=3.0V, IC=0		0.1	A
DC Current Gain (1)	hFE(1)	VCE=1.0V, IC=50mA	150	300
DC Current Gain (2)	hFE(2)	VCE=1.0V, IC=500mA	40
Collector-Emitter Saturation Voltage	VCE(sat)	IC=500mA, IB=50mA	0.16	0.6	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=500mA, IB=50mA	0.91	1.2	V
Base-Emitter Voltage	VBE	VCE=1.0V, IC=10mA	0.67	0.7	V

hFE Classifications & Marking

hFE Classification Symbol	hFE Range	Marking
D	6491	HJ3D
E	78112	HJ3E
F	96135	HJ3F
G	112166	HJ3G
H	144202	HJ3H
I	188276	HJ3I

Pinning

Pin 1	Pin 2	Pin 3
Base	Emitter	Collector

Marking Instructions

Note: H: Company Code, J3: Product Type Code, D: hFE Classification Symbol Code (e.g., HJ3D)

Resistance to Soldering Heat Test Conditions

Condition	Temperature	Time
Test	2605	101 sec.

Packaging SPEC.

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Reel Dimensions	Inner Box Dimensions	Outer Box Dimensions
SOT-23	3,000	10	30,000	6	180,000	78	180120180	39385205

2410121238_BLUE-ROCKET-9013M-H_C305460.pdf

High Current NPN Transistor BLUE ROCKET 9013M-H Suitable for Class B Amplifier and Complementary Pair

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