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TOSHIBA TBD62084AFNGZEL 8 channel DMOS transistor array designed for high current inductive load switching

Categories	Bipolar Transistor Arrays
Current - Collector(Ic):	-
Collector - Emitter Voltage VCEO:	50V
Operating Temperature:	-40℃~+85℃
Description:	50V SOP-18 Bipolar Transistor Arrays RoHS
Mfr. Part #:	TBD62084AFNG(Z,EL)
Model Number:	TBD62084AFNG(Z,EL)
Package:	SOP-18

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TOSHIBA TBD62084AFNGZEL 8 channel DMOS transistor array designed for high current inductive load switching

Product Overview

The TBD62083A and TBD62084A series are 8-channel sink-type DMOS transistor arrays designed for switching inductive loads. Each output includes a built-in clamp diode for protection. These devices offer high voltage (up to 50V) and high current (up to 500mA/ch) capabilities, making them suitable for various applications requiring robust output driving.

Product Attributes

Brand: TOSHIBA
Type: BiCD Integrated Circuit Silicon Monolithic
Material: Silicon

Technical Specifications

Series	Model	Package Type	Package Name	Weight (Typ.)	Output Voltage (MAX)	Output Current (MAX/ch)	Input Voltage (Output ON) MIN	Input Voltage (Output OFF) MAX
TBD62083A / TBD62084A	TBD62083APG, TBD62084APG	PG	P-DIP18-300-2.54-001	1.3 g	50 V	500 mA	2.5 V (TBD62083A) / 7.0 V (TBD62084A)	0.6 V (TBD62083A) / 1.0 V (TBD62084A)
TBD62083A / TBD62084A	TBD62083AFG, TBD62084AFG	FG	SOP18-P-375-1.27	0.41 g	50 V	500 mA	2.5 V (TBD62083A) / 7.0 V (TBD62084A)	0.6 V (TBD62083A) / 1.0 V (TBD62084A)
TBD62083A / TBD62084A	TBD62083AFNG, TBD62084AFNG	FNG	SSOP18-P-225-0.65	0.09 g	50 V	500 mA	2.5 V (TBD62083A) / 7.0 V (TBD62084A)	0.6 V (TBD62083A) / 1.0 V (TBD62084A)
TBD62083A / TBD62084A	TBD62083AFWG, TBD62084AFWG	FWG	P-SOP18-0812-1.27-001	0.48 g	50 V	500 mA	2.5 V (TBD62083A) / 7.0 V (TBD62084A)	0.6 V (TBD62083A) / 1.0 V (TBD62084A)

2411220247_TOSHIBA-TBD62084AFNG-Z-EL_C5370570.pdf

TOSHIBA TBD62084AFNGZEL 8 channel DMOS transistor array designed for high current inductive load switching

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