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| Categories | Transistor, Photovoltaic Output Optoisolators |
|---|---|
| Rise time: | 20us |
| Output Current: | 50mA |
| Fall time: | 20us |
| Operating Temperature: | -55℃~+125℃ |
| Load Voltage: | 40V |
| Load Type: | Phototransistor |
| Reverse Voltage: | 2V |
| Current transfer ratio: | 200%;1000% |
| Forward Current(If): | 40mA |
| Input type: | DC |
| Isolation Voltage(Vrms): | 1kV |
| Pd - Power Dissipation: | 300mW |
| Number of Channels: | 1 |
| Description: | 50mA 40V 2V DC TO-78-6 Transistor, Photovoltaic Output Optoisolators RoHS |
| Mfr. Part #: | 4N48 |
| Model Number: | 4N48 |
| Package: | TO-78-6 |
| Company Info. |
| Beijing Silk Road Enterprise Management Services Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
This series of isolators features an infrared emitting diode and a silicon phototransistor housed in a hermetically sealed TO-78 package. Designed for and harsh environments, these devices provide high-voltage isolation between input and output, electrical isolation in dirty environments, and are suitable for industrial, medical, and office equipment. Devices with the suffix 'D' denote that the collector is electrically isolated from the case. Models 4N22, 4N23, 4N24, 4N48, and 4N49 are processed to MIL-STD-19500/486, while models 4N47, 4N48, and 4N49 are processed to MIL-STD-19500/548.
| Part Number | Isolation Voltage (kV) | CTR Min/Max | IF (mA) | VCE (Volts) | Max Processing |
| 4N22 or 4N22D | 1.0 | 10%/40% | 35 | 486 | MIL-STD-19500/486 |
| 4N23 or 4N23D | 2.0 | N/A | N/A | N/A | MIL-STD-19500/486 |
| 4N24 or 4N24D | 4.0 | N/A | N/A | N/A | MIL-STD-19500/486 |
| 4N47 or 4N47D | 5.0 | 1%/40% | 40 | 548 | MIL-STD-19500/548 |
| 4N48 or 4N48D | 10.0 | N/A | N/A | N/A | MIL-STD-19500/548 |
| 4N49 or 4N49D | 20.0 | N/A | N/A | N/A | MIL-STD-19500/548 |
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Input Diode Forward Voltage | VF | IF = 10.0 mA | 0.70 | 1.30 | V |
| VF | IF = 10.0 mA, TA = -55C | 1.20 | 1.50 | V | |
| VF | IF = 10.0 mA, TA = -100C | 1.30 | 1.70 | V | |
| Input Diode Reverse Current | IR | VR = 2.0 V | 100 | A | |
| Output Phototransistor Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 1.0 mA, IB = 0, IF = 0 | 35 | V | |
| V(BR)CEO | IC = 1.0 mA, IB = 0, IF = 0 | 40 | V | ||
| Output Phototransistor Collector-Base Breakdown Voltage | V(BR)CBO | IC = 100 A, IB = 0, IF = 0 | 35 | V | |
| V(BR)CBO | IC = 100 A, IB = 0, IF = 0 | 45 | V | ||
| Output Phototransistor Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 100 A, IC = 0, IF = 0 | 4 | V | |
| V(BR)EBO | IE = 100 A, IC = 0, IF = 0 | 7.0 | V | ||
| Collector-Emitter Dark Current | IO(OFF) | VCE = 20 V, IF = 0 | 100 | nA | |
| IO(OFF) | VCE = 20 V, IF = 0, TA = 100C | 100 | nA | ||
| Coupled On-State Collector Current | IC | IF = 2.0 mA, VS = 5 V, IO = 0 | 0.15 | mA | |
| IC | IF = 10.0 mA, VS = 5 V, IO = 0 | 1.00 | mA | ||
| IC | IF = 10.0 mA, VS = 5 V, IO = 0, TA = -55C | 1.00 | mA | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IF = 20 mA, IC = 2.5 mA, IO = 0 | 0.30 | V | |
| VCE(SAT) | IF = 20 mA, IC = 5.0 mA, IO = 0 | 0.30 | V | ||
| VCE(SAT) | IF = 20 mA, IC = 10.0 mA, IO = 0 | 0.30 | V | ||
| Current Transfer Ratio | CTR | VS = 5 V, IF = 10.0 mA, IO = 0 | 300 | % | |
| Isolation Resistance (Input-to-Output) | RIO | 1011 | |||
| Isolation Capacitance (Input-to-Output) | Cio | 5 | pF |
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