Sub-1% Capacitance Matched MOS Capacitor 220pF 100V CTE Optimized Single Layer Chip For GaN SiC Power Modules

HACC221S100V502 Precision MOS Capacitor — 220 pF 100 V with Sub-1% Capacitance Matching and CTE Optimization for GaN & SiC Power Substrates

The HACC221S100V502 is a 220 pF ±10% single-layer MOS (metal-oxide-semiconductor) capacitor rated at 100 V DC, fabricated on float-zone silicon (>1000 Ω·cm) with 300 nm-class thermal SiO₂ dielectric and TiW-Au / TiW-Pt-Au metallization. Standard chip outline is 0.55 mm × 0.55 mm × 0.18 mm (±25 µm). It is engineered for wide-bandgap power modules where pair-to-pair capacitance symmetry and thermo-mechanical reliability under power cycling determine circuit performance.

Because the silicon MOS structure is formed directly on a single-crystal silicon substrate, its coefficient of thermal expansion (CTE, 2.6 ppm/°C) is inherently close to that of silicon-carbide and GaN-on-SiC power devices — an advantage over alumina-based ceramic capacitors when co-packaged on power substrates.

Sub-1% Precision Capacitance Matching across Wafers

• Wafer-level sorting service: capacitors are 100% electrically probed and sorted so that matched sets shipped together stay within <1% capacitance spread, across wafer position, wafer-to-wafer and lot-to-lot;
• Matched pairs and arrays are shipped with digital wafer map documentation and full lot traceability per wafer lot;
• Ultra-stable thermal SiO₂ dielectric keeps matching drift small over the full -55°C to +200°C range and under DC bias (TCC +35 ppm/°C);
• Ideal for balanced half-bridge gate drive, snubber and divider networks where capacitance symmetry controls switching balance and EMI.

Electrical Characteristics (typical, 25°C unless noted)

Typical Applications

Gate drive and snubber decoupling in GaN and SiC power modules; hybrid power modules and traction inverters; on-board chargers and high-density DC-DC converters; RF power amplifier bias networks; and any co-packaged power assembly where CTE match, matched capacitance and low inductance are required.

Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of ​​800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in the development, production, sales and technical services of and civilian electronic components, cable assemblies, high-precision electrical connectors, vibration isolators, microwave antennas, waterproof breathable valves and other products.

Our products are widely used in electronic equipment, aviation communications, postal and telecommunications, civilian electrical appliances, instrumentation and other technical fields. The products are sold all over the country. At present, there are more than 100 and civilian customers.

Hoan has obtained ISO9001:2005 quality management system certification and equipment quality management system certification. Since its establishment, the company has strictly organized and implemented operations in accordance with the standard requirements of the quality management system. The product quality is stable and reliable. There have been no customer complaints about quality and leakage accidents, and no production safety accidents.