High Diode 2300

Categories	Sleeve Connector
Packaging Details:	SOT-23
RDS(on):	28mΩ@1.8V
Reverse Transfer Capacitance (Crss@Vds):	70pF
Output Capacitance(Coss):	78.4pF
Gate Charge(Qg):	6.4nC@4.5V
Delivery Time:	6-13 working days
Operating Temperature -:	-55℃~+150℃
Description:	N-Channel 20V 4.5A 1.4W Surface Mount SOT-23
Gate Threshold Voltage (Vgs(th)):	1V@250uA
Type:	N-Channel
Pd - Power Dissipation:	1.4W
Current - Continuous Drain(Id):	4.5A
MOQ:	1
Input Capacitance(Ciss):	336pF
Model Number:	2300
Drain to Source Voltage:	20V
Number:	1 N-channel
Brand Name:	2300

Contact Now

Add to Cart

Company Info.

Shenzhen ECER Network Technology Co., Ltd.

Verified Supplier

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

Product Overview

Function: N-Channel MOSFET

Usage: Load Switch, DC/DC Converter

Advantages: Trench Technology, Low RDS(ON), Low Gate Charge, ESD Protected

HIGH DIODE SEMICONDUCTOR

SOT-23

RoHS Compliant

Trench Technology Power MOSFET

Parameter	Symbol	Test Condition	Min	Type	Max	Unit
Drain - Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = 250A			20	V
Zero Gate Voltage Drain Current	IDSS	VDS = 20V, VGS = 0V			1	A
Gate - Body Leakage Current	IGSS	VGS = 12V, VDS = 0V			100	nA
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250A	0.4	0.7	1	V
Drain-source On-resistance	RDS(on)	VGS = 4.5V, ID = 3A		18	32	m
Drain-source On-resistance	RDS(on)	VGS = 2.5V, ID = 2A		22	40	m
Drain-source On-resistance	RDS(on)	VGS = 1.8V, ID =2A		28	62	m
Input Capacitance	Ciss	VDS = 10V, f = 1MHz		336		pF
Output Capacitance	Coss	VDS = 10V, f = 1MHz		78.4		pF
Reverse Transfer Capacitance	Crss	VDS = 10V, f = 1MHz		70		pF
Total Gate Charge	Qg	VDS = 10V, VGS = 4.5V, ID=6A		6.4	8.2	nC
Gate-source Charge	Qgs	VDS = 10V, VGS = 4.5V, ID=6A		1.8	2.3	nC
Gate-drain Charge	Qg d	VDS = 10V, VGS = 4.5V, ID=6A		1.3	1.9	nC
Turn-on Delay Time	td(on)	VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6		10.5	21	ns
Turn-on Rise Time	tr	VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6		4.5	9	ns
Turn-off Delay Time	td(off)	VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6		27.5	55	ns
Turn-off Fall Time	tf	VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6		4.3	8.6	ns
Diode Forward Voltage	VSD	VGS = 0V, IS = 1.7A			1.2	V

Parameter	Symbol	Value	Unit
Drain - Source Voltage	VDS	20	V
Gate - Source Voltage	VGS	12	V
Continuous Drain Current	ID	4.5	A
Pulsed Drain Current	IDM	18	A
Power Dissipation	PD	1.4	W
Thermal Resistance Junction to Ambient	RJA	89	/W
Junction Temperature	TJ	150
Storage Temperature	TSTG	-55~ +150

Symbol	Min (mm)	Max (mm)	Min (in)	Max (in)
A	0.900	1.150	0.035	0.045
A1	0.000	0.100	0.000	0.004
A2	0.900	1.050	0.035	0.041
b	0.300	0.500	0.012	0.020
c	0.080	0.150	0.003	0.006
D	2.800	3.000	0.110	0.118
E	1.150	1.500	0.045	0.059
E1	2.250	2.650	0.089	0.104
e	1.800	2.000	0.071	0.079
e1	0.950 TYP	0.037 TYP
L	0.300	0.500	0.012	0.020
L1
	0	8	0	8

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Shenzhen ECER Network Technology Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!