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Slkor DTC114YE

Categories Single, Pre-Biased Bipolar Transistors
Current - Collector Cutoff: 500nA
DC Current Gain: 68@5mA,5V
Current - Collector(Ic): 100mA
type: NPN
Transition frequency(fT): 250MHz
Input Resistor: 10kΩ
Vce Saturation(VCE(sat)): 300mV@250uA,5mA
Resistor Ratio: 4.7
Pd - Power Dissipation: 150mW
Collector - Emitter Voltage VCEO: 50V
Description: 68@5mA,5V 100mA 150mW 50V SOT-523 Single, Pre-Biased Bipolar Transistors RoHS
Mfr. Part #: DTC114YE
Model Number: DTC114YE
Package: SOT-523
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Slkor DTC114YE

Product Overview

NPN Silicon Epitaxial Planar Digital Transistor with built-in bias resistors. This design simplifies circuit design and reduces the quantity of parts and manufacturing process.

BrandSLK
Product NameDTC114YE
TypeNPN Silicon Epitaxial Planar Digital Transistor
Package TypeSOT-523

Technical Specifications

ParameterSymbolMin.Typ.Max.Unit
DC Current GainhFE68---
Collector Base Cutoff CurrentICBO--0.5µA
Emitter Base Cutoff CurrentIEBO--0.88mA
Collector Emitter Saturation VoltageVCE(sat)--0.3V
Input on VoltageV(on)--1.4V
Input off VoltageV(off)0.3--V
Transition frequencyfT-250-MHz
Input ResistanceR171013
Resistance RatioR2 / R13.74.75.7-

Absolute Maximum Ratings

ParameterSymbolValueUnit
Collector Emitter VoltageVCEO50V
Input VoltageVI-6 to +40V
Collector CurrentIC100mA
Power DissipationPtot150mW
Junction TemperatureTj150°C
Storage Temperature RangeTstg-55 to +150°C

Package Outline Dimensions (SOT-523)

SymbolDimensionMinMax
AOverall height0.600.80
A1Height above seating plane0.0100.100
BOverall width0.951.05
bpWidth of lead, 2x0.260.40
bqWidth of lead, 2x0.160.30
CFlat on top of package, 2x0.090.15
DOverall length1.501.70
EOverall width0.700.85
HEOverall height1.451.75
LpLead length, 2x0.160.36
θAngle

2412171034_Slkor-DTC114YE_C42415191.pdf
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