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HN1B04FE-GR,LF

HN1B04FE-GR,LF
Categories Bipolar Transistors - BJT
Transistor Polarity :: NPN, PNP
Product Category :: Bipolar Transistors - BJT
Mounting Style :: SMD/SMT
Maximum DC Collector Current :: 150 mA, - 150 mA
Collector- Emitter Voltage VCEO Max :: 50 V, - 50 V
Package / Case :: SOT-563-6
Maximum Operating Temperature :: + 150 C
Gain Bandwidth Product fT :: 80 MHz, 80 MHz
Configuration :: Dual
Collector- Base Voltage VCBO :: 60 V, - 50 V
Series :: HN1B04
Emitter- Base Voltage VEBO :: 5 V, - 5 V
Collector-Emitter Saturation Voltage :: 100 mV, - 100 mV
Manufacturer :: Toshiba
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HN1B04FE-GR,LF

The HN1B04FE-GR,LF,from Toshiba,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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