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IHW30N160R2

IHW30N160R2
Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 60 A
Pd - Power Dissipation :: 312 W
Collector- Emitter Voltage VCEO Max :: 1600 V
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 2.35 V
Manufacturer :: Infineon Technologies
Description: IGBT Transistors RC-IGBT MONO DIODE 1600V 30A
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IHW30N160R2

The IHW30N160R2,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

M28W160CB70N6E

  

M29W160EB70N6E

  

M29W320DT70N6E

  
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