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FGA30S120P

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 500 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 60 A
Pd - Power Dissipation :: 174 W
Collector- Emitter Voltage VCEO Max :: 1300 V
Package / Case :: TO-3PN
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: 25 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 2.3 V
Manufacturer :: Fairchild Semiconductor
Description: IGBT Transistors Shorted AnodeTM IGBT
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FGA30S120P

The FGA30S120P,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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