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FGA5065ADF

Categories IGBT Transistors
Gate-Emitter Leakage Current :: +/- 400 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 100 A
Pd - Power Dissipation :: 268 W
Collector- Emitter Voltage VCEO Max :: 650 V
Package / Case :: TO-3PN
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: +/- 30 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 2.28 V
Manufacturer :: Fairchild Semiconductor
Description: IGBT Transistors FS3 650V SHD prolferation
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FGA5065ADF

The FGA5065ADF,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

HEF4027BP

  

F65535A

  

PC28F128P30BF65A

  
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