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IXXH80N65B4

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 160 A
Pd - Power Dissipation :: 625 W
Collector- Emitter Voltage VCEO Max :: 650 V
Package / Case :: TO-247AD-3
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 1.65 V
Manufacturer :: IXYS
Description: IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
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IXXH80N65B4

The IXXH80N65B4,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

SE555DR

  

XC95108

  

K9F5608U0D

  
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