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FGA30T65SHD

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 400 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 60 A
Pd - Power Dissipation :: 238 W
Collector- Emitter Voltage VCEO Max :: 650 V
Package / Case :: TO-3PN
Maximum Operating Temperature :: + 175 C
Packaging :: Tube
Maximum Gate Emitter Voltage :: 30 V
Collector-Emitter Saturation Voltage :: 2.14 V
Manufacturer :: Fairchild Semiconductor
Description: IGBT Transistors 650V FS Gen3 Trench IGBT
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FGA30T65SHD

The FGA30T65SHD,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

F65535A

  

lga1155 i5

  

HEF4027BP

  
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