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IRF1018ESPBF

Categories MOSFET
Product Category :: MOSFET
Vgs (Max) :: ±20V
Current - Continuous Drain (Id) @ 25°C :: 79A (Tc)
FET Type :: N-Channel
Mounting Type :: Surface Mount
Gate Charge (Qg) (Max) @ Vgs :: 69nC @ 10V
Manufacturer :: Infineon Technologies
Minimum Quantity :: 1000
Drive Voltage (Max Rds On, Min Rds On) :: 10V
Operating Temperature :: -55°C ~ 175°C (TJ)
FET Feature :: -
Series :: HEXFET®
Input Capacitance (Ciss) (Max) @ Vds :: 2290pF @ 50V
Supplier Device Package :: D2PAK
Packaging :: Tube
Rds On (Max) @ Id, Vgs :: 8.4 mOhm @ 47A, 10V
Power Dissipation (Max) :: 110W (Tc)
Package / Case :: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology :: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :: 4V @ 100µA
Drain to Source Voltage (Vdss) :: 60V
Description: MOSFET N-CH 60V 79A D2PAK
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IRF1018ESPBF

The IRF1018ESPBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

PCF7947AT

  

PCF8593T

  

PCF8574ATD

  
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