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TJ20S04M3L,LXHQ

Categories Single FETs, MOSFETs
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature: -
Vgs(th) (Max) @ Id: 3V @ 1mA
Operating Temperature: 175°C
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
FET Type: P-Channel
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Product Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Mounting Type: Surface Mount
Series: U-MOSVI
Supplier Device Package: DPAK+
Mfr: Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Power Dissipation (Max): 41W (Tc)
Technology: MOSFET (Metal Oxide)
Base Product Number: TJ20S04
Description: MOSFET P-CH 40V 20A DPAK
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TJ20S04M3L,LXHQ

P-Channel 40 V 20A (Ta) 41W (Tc) Surface Mount DPAK+
Product Tags:

TL2843DR

  

M36L0R8060B9ZAQF

  

LM7171AIM

  
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