IRLD014PBF

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2V @ 250µA
Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	4-DIP (0.300", 7.62mm)
Gate Charge (Qg) (Max) @ Vgs:	8.4 nC @ 5 V
Rds On (Max) @ Id, Vgs:	200mOhm @ 1A, 5V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Package:	Tube
Drain to Source Voltage (Vdss):	60 V
Vgs (Max):	±10V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	400 pF @ 25 V
Mounting Type:	Through Hole
Series:	-
Supplier Device Package:	4-HVMDIP
Mfr:	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:	1.7A (Ta)
Power Dissipation (Max):	1.3W (Ta)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	IRLD014
Description:	MOSFET N-CH 60V 1.7A 4DIP

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 60 V 1.7A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Product Tags:

DAF 0260204

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