Home > Plastic Jars >

IPP020N06NAKSA1

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2.8V @ 143µA
Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	TO-220-3
Gate Charge (Qg) (Max) @ Vgs:	106 nC @ 10 V
Rds On (Max) @ Id, Vgs:	2mOhm @ 100A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Package:	Tube
Drain to Source Voltage (Vdss):	60 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	7800 pF @ 30 V
Mounting Type:	Through Hole
Series:	OptiMOS™
Supplier Device Package:	PG-TO220-3
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	29A (Ta), 120A (Tc)
Power Dissipation (Max):	3W (Ta), 214W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	IPP020
Description:	MOSFET N-CH 60V 29A/120A TO220-3

Contact Now

Add to Cart

Company Info.

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

N-Channel 60 V 29A (Ta), 120A (Tc) 3W (Ta), 214W (Tc) Through Hole PG-TO220-3

Product Tags:

ISP1181ADGG

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Beijing Silk Road Enterprise Management Services Co.,LTD
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!