SCT3017ALHRC11

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	5.6V @ 23.5mA
Operating Temperature:	175°C (TJ)
Package / Case:	TO-247-3
Gate Charge (Qg) (Max) @ Vgs:	172 nC @ 18 V
Rds On (Max) @ Id, Vgs:	22.1mOhm @ 47A, 18V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	18V
Package:	Tube
Drain to Source Voltage (Vdss):	650 V
Vgs (Max):	+22V, -4V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	2884 pF @ 500 V
Mounting Type:	Through Hole
Series:	Automotive, AEC-Q101
Supplier Device Package:	TO-247N
Mfr:	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:	118A (Tc)
Power Dissipation (Max):	427W
Technology:	SiCFET (Silicon Carbide)
Base Product Number:	SCT3017
Description:	SICFET N-CH 650V 118A TO247N

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 650 V 118A (Tc) 427W Through Hole TO-247N

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