IAUC100N04S6L025ATMA1

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2V @ 24µA
Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:	34 nC @ 10 V
Rds On (Max) @ Id, Vgs:	2.56mOhm @ 50A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	40 V
Vgs (Max):	±16V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	2019 pF @ 25 V
Mounting Type:	Surface Mount
Series:	Automotive, AEC-Q101, OptiMOS™
Supplier Device Package:	PG-TDSON-8
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Power Dissipation (Max):	62W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	IAUC100
Description:	IAUC100N04S6L025ATMA1

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 40 V 100A (Tc) 62W (Tc) Surface Mount PG-TDSON-8

Product Tags:

INA199A1DCKT

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