RS1E260ATTB1

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Operating Temperature:	150°C (TJ)
Package / Case:	8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:	175 nC @ 10 V
Rds On (Max) @ Id, Vgs:	3.1mOhm @ 26A, 10V
FET Type:	P-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	30 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	7850 pF @ 15 V
Mounting Type:	Surface Mount
Series:	-
Supplier Device Package:	8-HSOP
Mfr:	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:	26A (Ta), 80A (Tc)
Power Dissipation (Max):	3W (Ta)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	RS1E
Description:	MOSFET P-CH 30V 26A/80A 8HSOP

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Beijing Silk Road Enterprise Management Services Co.,LTD

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P-Channel 30 V 26A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP

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