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RQ3G110ATTB

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Operating Temperature:	150°C (TJ)
Package / Case:	8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:	46 nC @ 10 V
Rds On (Max) @ Id, Vgs:	12.4mOhm @ 11A, 10V
FET Type:	P-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	40 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	2750 pF @ 20 V
Mounting Type:	Surface Mount
Series:	-
Supplier Device Package:	8-HSMT (3.2x3)
Mfr:	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:	11A (Ta), 35A (Tc)
Power Dissipation (Max):	2W (Ta)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	RQ3G110
Description:	PCH -40V -35A, HSMT8, POWER MOSF

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Company Info.

Beijing Silk Road Enterprise Management Services Co.,LTD

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P-Channel 40 V 11A (Ta), 35A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

Product Tags:

MT29F2G16ABBEAH4-IT:E

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