BSC065N06LS5ATMA1

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2.3V @ 20µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:	13 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:	6.5mOhm @ 32A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	60 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	1800 pF @ 30 V
Mounting Type:	Surface Mount
Series:	OptiMOS™
Supplier Device Package:	PG-TDSON-8-6
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	64A (Tc)
Power Dissipation (Max):	46W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	BSC065
Description:	MOSFET N-CHANNEL 60V 64A 8TDSON

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 60 V 64A (Tc) 46W (Tc) Surface Mount PG-TDSON-8-6

Product Tags:

BC869-16

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