STP10NM60N

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	4V @ 250µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	TO-220-3
Gate Charge (Qg) (Max) @ Vgs:	19 nC @ 10 V
Rds On (Max) @ Id, Vgs:	550mOhm @ 4A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V
Package:	Tube
Drain to Source Voltage (Vdss):	600 V
Vgs (Max):	±25V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	540 pF @ 50 V
Mounting Type:	Through Hole
Series:	MDmesh™ II
Supplier Device Package:	TO-220
Mfr:	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Power Dissipation (Max):	70W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	STP10
Description:	MOSFET N-CH 600V 10A TO220AB

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 600 V 10A (Tc) 70W (Tc) Through Hole TO-220

Product Tags:

STP11NM60FP

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