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PSMN1R2-30YLC,115

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	1.95V @ 1mA
Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:	78 nC @ 10 V
Rds On (Max) @ Id, Vgs:	1.25mOhm @ 25A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	30 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	5093 pF @ 15 V
Mounting Type:	Surface Mount
Series:	-
Supplier Device Package:	LFPAK56, Power-SO8
Mfr:	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Power Dissipation (Max):	215W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	PSMN1R2
Description:	MOSFET N-CH 30V 100A LFPAK56

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 30 V 100A (Tc) 215W (Tc) Surface Mount LFPAK56, Power-SO8

Product Tags:

PMST2222A

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