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SIS410DN-T1-GE3

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:	41 nC @ 10 V
Rds On (Max) @ Id, Vgs:	4.8mOhm @ 20A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	20 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	1600 pF @ 10 V
Mounting Type:	Surface Mount
Series:	TrenchFET®
Supplier Device Package:	PowerPAK® 1212-8
Mfr:	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:	35A (Tc)
Power Dissipation (Max):	3.8W (Ta), 52W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	SIS410
Description:	MOSFET N-CH 20V 35A PPAK 1212-8

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 20 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Product Tags:

K4S511632D-UC75

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