ISS55EP06LMXTSA1

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2V @ 11µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:	0.59 nC @ 10 V
Rds On (Max) @ Id, Vgs:	5.5Ohm @ 180mA, 10V
FET Type:	P-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	60 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	18 pF @ 30 V
Mounting Type:	Surface Mount
Series:	OptiMOS™
Supplier Device Package:	PG-SOT23-3-5
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	180mA (Ta)
Power Dissipation (Max):	400mW (Ta)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	ISS55EP06
Description:	MOSFET P-CH 60V 180MA SOT23-3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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P-Channel 60 V 180mA (Ta) 400mW (Ta) Surface Mount PG-SOT23-3-5

Product Tags:

TDA4605-3

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