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BSM25GD120DN2

Categories IC Transistor
Gate-Emitter Leakage Current :: 180 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 35 A
Pd - Power Dissipation :: 200 W
Collector- Emitter Voltage VCEO Max :: 1200 V
Package / Case :: EconoPACK 2A
Maximum Operating Temperature :: + 150 C
Configuration :: Hex
Collector-Emitter Saturation Voltage :: 2.5 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Description: IGBT Modules 1200V 25A FL BRIDGE
Stock: In Stock
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BSM25GD120DN2

The BSM25GD120DN2,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

BSN254

  

NTD70N03RT4G

  

BSP122

  
Buy BSM25GD120DN2 at wholesale prices
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