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FP50R06W2E3

Categories IC Transistor
Gate-Emitter Leakage Current :: 400 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 65 A
Pd - Power Dissipation :: 175 W
Collector- Emitter Voltage VCEO Max :: 600 V
Package / Case :: Module
Maximum Operating Temperature :: + 150 C
Packaging :: Tray
Configuration :: IGBT-Inverter
Collector-Emitter Saturation Voltage :: 1.45 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Description: IGBT Modules IGBT 600V 50A
Stock: In Stock
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FP50R06W2E3

The FP50R06W2E3,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

FV80503233

  

FV80502166

  

FW82830MP(SL5P7)

  
Buy FP50R06W2E3 at wholesale prices
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