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FF650R17IE4

Categories IC Transistor
Gate-Emitter Leakage Current :: 400 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 930 A
Pd - Power Dissipation :: 4.15 kW
Collector- Emitter Voltage VCEO Max :: 1700 V
Package / Case :: PRIME2
Maximum Operating Temperature :: + 150 C
Configuration :: Dual
Collector-Emitter Saturation Voltage :: 2.45 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Description: IGBT Modules N-CH 1.7KV 930A
Stock: In Stock
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FF650R17IE4

The FF650R17IE4,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

FV80502166

  

FV80503233

  

FW82443DX

  
Buy FF650R17IE4 at wholesale prices
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