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FS50R17KE3_B17

Categories IC Transistor
Gate-Emitter Leakage Current :: 400 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 82 A
Pd - Power Dissipation :: 345 W
Collector- Emitter Voltage VCEO Max :: 1.7 kV
Package / Case :: Module
Maximum Operating Temperature :: + 125 C
Configuration :: IGBT-Inverter
Collector-Emitter Saturation Voltage :: 2 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Description: IGBT Modules IGBT MODULE HALF BRG 50A 1700V
Stock: In Stock
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FS50R17KE3_B17

The FS50R17KE3_B17,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

R1117-1.8

  

BQ24070RHLR

  

BQ24105RHLR

  
Buy FS50R17KE3_B17 at wholesale prices
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