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FF300R12ME4

Categories IC Transistor
Gate-Emitter Leakage Current :: 0.4 uA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 450 A
Collector- Emitter Voltage VCEO Max :: 1200 V
Pd - Power Dissipation :: 1.6 kW
Maximum Operating Temperature :: + 125 C
Configuration :: Dual
Collector-Emitter Saturation Voltage :: 1.75 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Description: IGBT Modules IGBT 1200V 300A
Stock: In Stock
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FF300R12ME4

The FF300R12ME4,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

L584

  

FV80503233

  

LM193DRG4

  
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