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FP75R12KT4

Categories IC Transistor
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Modules
Continuous Collector Current at 25 C :: 150 A
Pd - Power Dissipation :: 385 W
Collector- Emitter Voltage VCEO Max :: 1200 V
Package / Case :: Econo 3
Maximum Operating Temperature :: + 150 C
Configuration :: 3-Phase
Collector-Emitter Saturation Voltage :: 2.25 V
Product :: IGBT Silicon Modules
Manufacturer :: Infineon Technologies
Description: IGBT Modules 1.85V IGBT 4 PIM
Stock: In Stock
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FP75R12KT4

The FP75R12KT4,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

F65535A

  

TFP7515DGGR

  

TL16C554IFNG4

  
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