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IXGH40N120B2D1

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 75 A
Pd - Power Dissipation :: 380 W
Collector- Emitter Voltage VCEO Max :: 1.2 kV
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 150 C
Maximum Gate Emitter Voltage :: +/- 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 2.9 V
Manufacturer :: IXYS
Description: IGBT Transistors IGBT, Diode 1200V, 75A
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IXGH40N120B2D1

The IXGH40N120B2D1,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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