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Total 12472 products from rf fet transistor Manufactures & Suppliers |
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Brand Name:Analog Devices Inc. Model Number:HMC442LC3BTR Place of Origin:Multi-origin ... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low ... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Vishay Siliconix Model Number:SI7615ADN-T1-GE3 Place of Origin:USA Vishay Discrete RF Power Transistor Trans MOSFET SI7615ADN-T1-GE3 Product Specifications:SI7615ADN.pdf SI7615ADN-T1-GE3 Specifications Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - ... |
HK HUAYONGLI ELECTRONIC INDUSTRIAL CO.,LIMTED.
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Brand Name:VBE Model Number:VBE36015E2 Place of Origin:CHINA
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VBE Technology Shenzhen Co., Ltd.
Guangdong |
Brand Name:Original Factory Model Number:IPP65R050CFD7A Place of Origin:CN ...220-3, Through Hole. Specification Of IPP65R050CFD7A Part Number IPP65R050CFD7A FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:MACOM Model Number:MRF150 Place of Origin:PHI Manufacturer: MACOM Product Category: RF MOSFET Transistors RoHS: Details Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 16 A Vds - Drain-Source Breakdown Voltage: 125 V Rds On - Drain-Source Resistance: - Operating Frequency... |
Wisdtech Technology Co.,Limited
Guangdong |
Brand Name:ST Model Number:PD57018-E Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage... |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:Texas Instruments Model Number:PD85035S-E Place of Origin:Malaysia PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates... |
Angel Technology Electronics Co
Hongkong |
Brand Name:VISHAY Model Number:S525T-GS08 Place of Origin:USA VISHAY IC S525T-GS08 Surface Mount SOT-223 S525T Product Paramenters Manufacturer: Vishay Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 mA Vds - Drain-Source Breakdown Voltage: ... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Brand Name:REASUNOS Place of Origin:Guangdong, CN Product Description: High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularity due to its strong performance and wide range... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
Brand Name:Freescale Model Number:MRFE6VP6300HR5 Place of Origin:USA MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile ... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
Brand Name:Original brand Model Number:2SC2879 Place of Origin:JAPAN Toshiba 2SC2879A Transistor C2879 NPN Silicon RF Power Transistor 2SC2879 Power Amplifier Power Switching Transistor Description: Toshiba 2SC2879 Silicon NPN RF Power Transistor for HF (2 ~ 30MHz) SSB Linear Power Amplifier Applications Product Image: How ... |
Ysonix Tech Co.,LTD
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Place of Origin:Taiwan Brand Name:Motorola, Inc Model Number:MRF136 Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ... |
Mega Source Elec.Limited
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Brand Name:original Model Number:MRF9045LR1 Place of Origin:original ...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor... |
Walton Electronics Co., Ltd.
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Brand Name:NXP Model Number:BFS505 Place of Origin:CHINA ...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
Brand Name:Original brand Model Number:STWA65N60DM6 Place of Origin:Original Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode... |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
Place of Origin:US Brand Name:Original Model Number:AOD478 Product Detail Packaging Cut Tape (CT) Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Model Number:BLF7G20L-90P Place of Origin:Malaysia Brand Name:KAIGENG BLF7G20L-90P N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF7G20L-90P #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border... |
Shenzhen Kaigeng Technology Co., Ltd.
Guangdong |
Brand Name:Hua Xuan Yang Model Number:AOD442 Place of Origin:ShenZhen China AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
Brand Name:original Model Number:BSC900N20NS3GATMA1 Place of Origin:original ... Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Mfr Infineon Technologies Series OptiMOS™ Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to |
SZ ADE Electronics Co., Ltd
Guangdong |
Brand Name:VISHAY Model Number:SUD50P06-15L-E3 Place of Origin:Original Manufacturer ...-E3 TO252 TRENCH FET SERIES Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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