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MgAl2O4 Spinel Crystal Substrates / Transparent Spinel ±0.05 Mm Thickness

Categories Substrate Crystals
Place of Origin: China
Brand Name: CRYLINK
Certification: Iso9001
MOQ: 1 Pieces
Price: negotiation
Packaging Details: Carton
Delivery Time: 3-4 weeks
Payment Terms: TT
Supply Ability: 100 pieces /month
Model Number: CRYLINK-MgAl2O4 Spinel Crystal
Name: MgAl2O4 Crystal Substrates
Orientation: [100] or [100] or[111] < ±0.5°
Chamfer: <0.1×45°
Thickness/DiameterTolerance: ±0.05 mm
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    MgAl2O4 Spinel Crystal Substrates / Transparent Spinel ±0.05 Mm Thickness

    Description

    Magnesium Aluminate (MgAl2O4 or spinel) single crystalsare widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. MgAl2O4 is an attractive material for uses in a wide range of optical, electronic and structural applications including windows and lenses, which require excellent transmission from the visible through to the mid IR.

    Theoretical transmission is very uniform and approaches 87% between 0.3 to 5 microns. Transmission characteristics rival that of ALON and sapphire in the mid-wave IR, making it especially attractive for the ever-increasing performance requirements of current and next-generation IR imaging systems.

    It is also found that MgAl2O4 is a good substrate for III-V nitrides device. Spinel (MgAl2O4) is one candidate for such GaN LDs substrate. The crystallographic structure of MgAl2O4 is a spinel type (Fd3m), and its lattice constant is 8.083 A. MgAl2O4 is a relatively low-cost substrate material, which has been successfully applied to the growth of high quality GaN films.

    MgAl2O4 is cleaved on the (100) plane. GaN LD cavities have been obtained by simply cleaving MgAl2O4 substrates along the (100) direction, which will also work well for ZnO. MgAl2O4 crystal is very difficult to grow, due to the difficulty in maintaining a single phase structure.


    Features

    • good optical, chemical and thermal properties
    • good high temperature properties
    • stable physical performance

    Applications

    • MgAl2O4 substrate

    Main Specification

    Materials

    MgAl2O4

    Orientation

    [100] or [100] or[111] < ±0.5°

    Parallel

    10

    Perpendicular

    5

    surface Quality

    10/5

    Wavefront Distortion

    /4@632nm

    Surface Flatness

    /8@632nm

    Clear Aperture

    >95%

    Chamfer

    <0.1×45°

    Thickness/DiameterTolerance

    ±0.05 mm

    Maximum dimensions

    dia 50×100mm

    Coatings

    AR/AR@940+1030HR@1030+HT@940+AR1030


    Material characteristics

    Physical and chemicalcharacteristics

    Chemicalformula

    MgAl2O4

    Crystalstructure

    cubicm3m

    Latticeparameters,

    a= 8.083

    MeltingPoint(℃)

    2130°C

    Density,g/cm3

    3.61g/cm3

    TransmissionRange

    0.215.3 m

    Refractiveindex

    1.8245@0.8 m,

    Mohshardness

    8

    Thermalconductivity at 25°C, W x cm-1 x °K-1

    14.0W/(mK)

    Thermalexpansion coefficient

    7.45×10-6/K

    PhaseVelocity

    6500 m/s at (100) shear wave

    Propagationloss

    6.5dB/ms

    SpecificHeat

    0.59W.s/g/K


    Product Tags:

    gallium gadolinium garnet

      

    zno wafer

      
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